Figure 5
Performance of the CMO/T-BFO ferroelectric FET.
Dependence on CMO thickness of the sheet resistance in the ON and OFF states at 200K (a) and 290K (b). (c) Resistance ratios between the OFF and ON states compared at 290 K (squares) and 200 K (circles), plotted against tCMO. (d) −1/eRH plotted against tCMO for the OFF (blue) and ON (red) states, where RH and e represent Hall coefficient at 290 K and elemental charge, respectively. The experimental data are shown as symbols and the lines are simulations with our electrostatic model.
