Figure 5
From: Reversible insulator-metal transition of LaAlO3/SrTiO3 interface for nonvolatile memory
Memory effect of insulating LAO/STO interface.
(a) Revisable memory operation cycles. The 514 nm laser illumination was used for Write operation to produce the On state. The back gate voltage was used for Erase operation to return to the Off state. The source-drain bias voltage of 0.2 V was applied to perform the Read operation. (b) Voltage pulses applied to the back gate. Duration is ~ 2 seconds. The experiments were performed at 300 K.
