Figure 1: Microstructure and phase analysis for selenized CZTSSe films.

(a) Scanning electron microscope (SEM) images of selenized CZTSSe films in an in-plane view. The precursor CZTS films are annealed at 530°C under a N2 + H2S (5%) atmosphere in a tubular furnace and are then annealed under Se vapor at 500°C for 20 min in a graphite box to form the CZTSSe absorbing layer. (b) XRD analysis of the sulfurized CZTS film (red) and selenized CZTSSe films (blue). The enlargement of the 2θ-angle range from 26° to 29° shows the (112) peak positions of CZTS and CZTSSe films.