Figure 2: Characterization of CZTSSe thin-film solar cells. | Scientific Reports

Figure 2: Characterization of CZTSSe thin-film solar cells.

From: Band-gap-graded Cu2ZnSn(S1-x,Sex)4 Solar Cells Fabricated by an Ethanol-based, Particulate Precursor Ink Route

Figure 2

(a) Cross-sectional image of the Se-graded CZTSSe thin-film solar cell. (b) J-V characteristics for the Se-graded CZTSSe thin-film solar cells compared to the previously reported CZTS device20. All CZTSSe samples (#1 ~ #5) were fabricated under the same process conditions, but produced in different batches. All device performance parameters are based on the effective area (0.21 cm2), excluding the area shaded by the Ni/Al finger electrode. (c) The EQE curve of the Se-graded CZTSSe thin-film solar cells compared with the CZTS device. The band gap of the CZTSSe and CZTS absorber layer is determined to be 1.24 eV and 1.51 eV, respectively, from a plot of [E ln (1 − EQE)]2 versus E.

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