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Figure 1

From: Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Figure 1

Structural characterization of ZnO/Zn2SnO4 core/shell heterostructure nanowires.

(a) XRD pattern of the product, showing that it is composed of Zn2SnO4 and ZnO. (b) FESEM image. (c) Low-magnification bright-field TEM micrograph of ZnO/Zn2SnO4 nanowires, showing a typical core/shell heterostructure with dark core and light shell. (d) High-resolution TEM image, taken from the core/shell heterostructure interface area, the inset in (d) corresponds to the FFT pattern of outer shell.

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