Figure 2 | Scientific Reports

Figure 2

From: Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Figure 2

(a) Typical I-V characteristics of the Ag-ZnO/Zn2SnO4-Ag RS memory device in linear scale, the numbered arrows (1–8) indicate the sweep direction. (b) I-V characteristics in semilogarithmic scale, the inset in (b) shows an enlarged optical image of the RS memory device based on an individual core/shell heterostructure. (c) Under voltage sweeps, the current response (blue curve) to voltage (red curve) and applying triangle wave voltage with an amplitude of 2.0 V and a frequency of 0.1 Hz. (d) An enlargement of a brown dashed frame in (c), the inset shows the schematic structure for the electrical measurement of the device.

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