Figure 3 | Scientific Reports

Figure 3

From: Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Figure 3

(a) Write/read access of RS cell as a memory, the red curve corresponding to applied voltage and the blue curve corresponding to respondent current. (b) an enlargement of a brown dashed frame in (a), showing a detail set/reset access, the information can be written/set by a relatively high voltage of 2 V, read by a relatively low voltage of 0.3 V and erased/reset by a reverse biased voltage of −0.5 V.

Back to article page