Figure 1 | Scientific Reports

Figure 1

From: Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy

Figure 1

Cross-sectional TEM and EDX of (Bi0.53Sb0.47)2Te3.

(a) A schematic diagram of the atomic layer structures of the TI film, interface and substrate. (b) High resolution TEM image exhibits QL of (Bi0.53Sb0.47)2Te3 film, GaAs substrate and the atomically sharp interface. Each QL is marked by the blue lines. A single GaSe layer is marked by the orange lines. (c–g) Distribution maps of individual elements: Bi/Sb (c), Te (d), Se (e), Ga (f) and As (g). (h) Average intensity profile of (b). The sharp peak of Se (red circles) confirms the presence of GaSe single layer.

Back to article page