Figure 1

PL spectra measured for individual mechanically exfoliated MoS2 uncapped films deposited on a 300 nm SiO2 layer grown by either PECVD (a–d) or thermal oxidation (e–h) on a silicon substrate.
PL spectra measured for individual mechanically exfoliated MoS2 uncapped films deposited on a 300 nm SiO2 layer grown by either PECVD (a–d) or thermal oxidation (e–h) on a silicon substrate.