Figure 2

PL spectra measured for individual mechanically exfoliated MoS2 films capped by a 100 nm PECVD layer of dielectric material.
The effect of capping is shown for films deposited on PECVD grown SiO2 substrates for SixNy (a), (b) and SiO2 (c), (d) capping layers and also for films deposited on thermally grown SiO2 and capped with SixNy (e), (f) and SiO2 (g), (h).