Figure 1
From: Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond
Formation of NV centres.
(a) Photoluminescence spectrum of the grown diamond epi-layer with oxidized surface, normalized to the first order Raman line. The first and second order Raman lines as well as a weak NV signal are visible. The latter originates from the substrate containing a high nitrogen concentration. (b) NV-Photoluminescence spectrum (blue line) after nitrogen ion-beam implantation and annealing. The spectrum, normalized to the maximum intensity of the NV− phonon side bands, shows typical features such as the zero phonon line of the neutral charge state NV0 at 2.156 eV (575 nm) and of NV− at 1.945 eV (637 nm) and their phonon sidebands. The red curve is the weighted superposition of single NV0 and NV− spectra (see Fig. c) fitted to the measured spectrum for calculation of the NV0 to NV− ratio. (c) Normalized photoluminescence spectra of single NV0 and NV− centres as measured by Rondin et al.15.
