Figure 3
From: Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond
In-plane Schottky diode from diamond.
(a) Schematic figure of an in-plane Al Schottky diode on H-terminated diamond surface. A confocal μPL measurement was performed at the edge of the Al contact (green spot 1) to investigate the bias-voltage dependent variation of NV emission in the depletion region. The reference spectrum was measured 100 μm away from the edge of the Al contact (green spot 2). (b) The current-voltage properties of the fabricated in-plane Al-Schottky diode measured at ambient conditions at T = 300 K.
