Figure 6
From: Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond
Working principle of an in-plane Schottky junction.
Schematic band-diagram of a Schottky-junction for (a) reverse bias and (b) forward bias voltages applied on Al-Schottky contact. The green lines at the NV charge transition levels indicate the NV-layer region. For reverse bias voltages applied on Schottky contact the Fermi-level EF is pushed towards the NV0/− level, resulting in an increase of NV− emission close to the Al contact. For forward bias-voltages, the Fermi-level EF is pushed below the NV+/0 transition level and thus the NV centres are switched to the non-fluorescent state NV+.
