Figure 3
From: Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
Photoresponses of the graphene/MoS2 devices.
(a) Transfer curves for the graphene/MoS2 photodetector s under the exposure of light with various powers. (b) Photocurrent as a function of the gate voltage based on the transfer curves obtained in (a). (c) Shift of the charge neutral point VCNP and the corresponding electron density change (delta n) for a graphene/MoS2 photodetector with various light powers. (d) Quantum efficiency, (e) photoresponsivity and (f) photogain for the graphene/MoS2 photodetectors. The wavelength of the laser is 650 nm and the channel area for exposure is ~2.0 × 10−8 m2. (g) Photocurrent and (h) photoresponsivity of a photodetector based on a CVD graphene layer. A continuous wavelength 532 nm laser was used to illuminate the device at power density 35.21 W/cm2 (Vds = 0.1 V).
