Figure 4

(a) The I-V characteristic of glass/Cr(2 nm)/Ag(30 nm)/Co(10 nm)/CoO-ZnO(2 nm)/Au(60 nm) junction measured at 300 K. A current limiter of 100 uA was used. (b) The temperature dependent resistance of Ag(30 nm)/Co(10 nm)/CoO-ZnO(2 nm)/Co(30 nm)/Ag(60 nm) junction, which was measured using very small currents of 0.1 uA for the resistance in HRS and 10 uA for the resistance in LRS, respectively. (c) The time dependence of electrical switching of Ag(30 nm)/Co(10 nm)/CoO-ZnO(2 nm)/Co(30 nm)/Ag(60 nm) junction measured at 300 K. All measurements were carried out without magnetic field. The magnetic orientation of the Co magnetic layers is in the remanent magnetization state during the measurements.