Figure 5
From: Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier
Schematics of the migration of oxygen ions between very thin CoO and ZnO layers under a positive voltage and resulting metal-insulator transition of CoO1−v in Co/CoO-ZnO/Co junctions.
Due to the migration of oxygen ions from the CoO1−v layer to the ZnO1−v layer, the system involves from the high resistance state to the low resistance state under the positive voltage. Co and Zn atoms are not shown to simplify the schematics.
