Figure 2
From: A facile process for soak-and-peel delamination of CVD graphene from substrates using water
Comparative Raman spectroscopy of graphene transferred by etching Cu to release graphene and by using the SPeeD process.
Integrated Raman mapping over an area of 9 μm × 9 μm for the FWHM of the G peak of graphene transferred by (a) our SPeeD method using DI water and (b) conventional etching of Cu by ammonium persulphate solution. Colourscale maps of 2D/G peak intensity ratio for same area of graphene transferred by (c) our SPeeD method and (d) conventional Cu etching method. (e) Comparison of the spatially averaged Raman scattering spectra of graphene transferred by the two different methods. Inset of (e) shows the blue shift of 8 cm−1 in the G peak for graphene transferred by Cu etching which indicates that it is p-type doped.
