Figure 4
From: A facile process for soak-and-peel delamination of CVD graphene from substrates using water
Electrical transport measurements for devices fabricated using graphene samples transferred by two different methods.
(a) Optical image of CVD graphene grown on Cu transferred by SPeeD method. (b) Gating curve for the device fabricated with graphene transferred by conventional Cu etching method. (c) Gating curve for device fabricated with graphene transferred by SPeeD method. The source-drain spacing of the devices used for measurements was ~5 μm.
