Figure 2
From: Light trapping and surface plasmon enhanced high-performance NIR photodetector
Optoelectronic characteristics of the NIRPD.
(a) I-V curves of the NIRPD measured at room temperature, the inset shows the device structure; (b) I-V characteristics and (c) photoresponse of three representative devices under 850 nm light illumination at Vbias = 0 V; (d) The corresponding spectral response, the sensitivity is defined by 100 × Icurrent/Imax, where Imax is the maximum photocurrent of AuNPs@graphene/CH3-SiNWs array, at around 950 nm. To make the analysis more reliable, we kept the light power identical for all wavelengths during analysis.
