Table 1 Summary of the device performances of the present NIRPD and other photodetectors with similar device structures
From: Light trapping and surface plasmon enhanced high-performance NIR photodetector
Device Structure | Responsivity (A/W) | Response/Recovery time | Ilight/Idark | Detectivity (Jones) | Ref |
|---|---|---|---|---|---|
AuNPs@graphene/CH3-SiNWs | 1.5 | 73/96 μs | ~106 | ~1014 | Our work |
graphene/Si | 0.435 | 1.2/3 ms | ~104 | ~108 | |
graphene/ZnO nanorods array | 113 | 0.7/3.6 ms | ~103 | / | |
graphene/Ge wafer | 0.05 | 23/108 μs | ~104 | ~1010 | |
graphene-PbS QDs | 107 | 10/10 ms | / | ~1013 | |
graphene QDs arrays | 8.61 | / | ~101 | / | |
graphene/n-CdSe nanobelt | 8.7 | 70/137 μs | ~105 | / | |
graphene/pure SiNWs | / | 20 ms | ~103 | / |
