Figure 1
Vertically integrated AMCP on chromium anodes.
(a) Schematic view of AMCP architecture with channels reaching two independent readout anodes (the two grey layers on oxidized wafer). A bias voltage is applied on the top electrode and leakage currents are evacuated by the intermediate electrode, which is decoupled from the anodes by a 2 μm-thick a-Si:H layer. (b) Cross-sectional SEM image of the top of an AMCP showing the channel geometry. The <n> μc-Si:H electrode can be distinguished from the thick a-Si:H layer by the brighter contrast of its microcrystalline structure. (c) Cross-sectional SEM image of the base of an AMCP with an <n> μc-Si:H intermediate electrode isolated from the chromium anodes by a-Si:H. The two thin SiOx layers, which improve a-Si:H adhesion, have the same morphology as a-Si:H and are barely visible.
