Figure 3 | Scientific Reports

Figure 3

From: Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method

Figure 3

Resistive switching in pulse mode and conduction behavior of the proposed RGO-based ReRAMs.

(a), (b), Typical (a) program and (b) erase characteristics measured using ac pulse biases with pulse widths that range from 10 ns to 40 ns and pulse heights that range from 2 V to 7 V for the ITO/RGO/ITO cell. (c), Effect of temperature in the range from 20°C to 130°C on the 00, 01, 10 and 11 states of the ITO/RGO/ITO memory cells. (d), (e), C–V characteristic curves of the 00, 01, 10 and 11 states of the ITO/RGO/ITO memory cells on a (d) linear plot and (e) semi-log plot.

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