Figure 4
Reliability of the proposed RGO-based ReRAMs.
(a), Endurance characteristics for up to 105 cycles measured at VREAD = 0.1 V for the ITO/RGO/ITO cells. (b), Retention characteristics measured at VREAD = 0.1 V for the ITO/RGO/ITO cells at 25°C and 85°C.
