Figure 3
From: Direct writing of graphene patterns on insulating substrates under ambient conditions
Dependence of the graphene quality on laser average powers.
(a) typical Raman spectra of the graphene lines fabricated with three different laser average powers, including 12, 24 and 48 mW and (b) Raman D/G and 2D/G ratios of graphene lines as functions of laser average power. Fabrication of large-scale graphene patterns for integrated circuit (IC) application: (c) an IC layout in the GDSII format, (d) an extracted metal layer layout in the GWL format and (e) the fabricated graphene patterns on a glass substrate.
