Figure 1
From: Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
Memristive behaviours of Ag/AgInSbTe/Ag memristor.
(a) Schematic of the 100 × 100 μm2 Ag (100 nm)/AgInSbTe (25 nm)/Ag (100 nm) stack structures deposited on the Si/SiO2 substrate. (b) A scanning electron microscope image of the devices. (c) I-V characteristics showing bipolar memristive switches. Arrows indicate the voltage-sweep direction. Twenty cycles of operation are shown. (d) Gradual conductance modulation using voltage sweeping. The device conductance, which is equivalent to the synaptic weight, can be continuously increased or decreased by positive or negative voltage sweeps, respectively. (e) Repetitive gradual conductance modulation under pulse stimulation. The conductance variation range is approximately 7 mS. Upper inset: The pulse scheme. The positive and negative pulses correspond to the potentiating and depressing pulses, respectively.
