Figure 3
From: Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment
(a) shows a representative plot of σ(Vg) for a 4L-WS2 in the gate range 50 V to 65 V. (b) Typical temperature dependence of the conductivity plotted in terms of the activation energy relation (this curve is taken at Vg = 60.5 V). The inset is a plot of the extracted activation energy for different gate voltages, each point corresponds to an average over 0.2 V gate voltage. (c) shows the same data as in (b) but plotted in terms of 2D Mott variable range hopping relation. (d) The conductivity at 4.2 K plotted alongside the hopping parameter T0. A strong correlation between the two is observed: i.e. peaks in conductance correspond to low values of T0.
