Figure 1
From: Characterization of nanoscale temperature fields during electromigration of nanowires
Schematic of the measurement approach and data describing the local temperature rise during electromigration.
(a) Schematic of the ultra-high vacuum scanning thermal microscopy used in this work. (b) A representative scanning electron microscope image of a nanogap junction after electromigration. (c) A two-dimensional color plot that captures the resistance change and the local temperature rise of the device when it is subjected to a cyclic voltage application (represented by black arrows) at room temperature. The point at which the maximum temperature attained is indicated by the red vertical arrow. (d) Similar data as in (c) obtained at a low temperature.
