Figure 2
From: Characterization of nanoscale temperature fields during electromigration of nanowires
Local temperature rise profiles during electromigration.
(a) – (d) The traces relating both the temperature and power dissipation to the device resistance during electromigration. The traces were obtained at various stages of electromigration where the device resistance increased by 1.5%, 2.5%, 10% and 40%, respectively. The green line is obtained by fitting the temperature vs. resistance data at small power dissipations and is provided to facilitate visualization of deviations from linearity.
