Table 1 FET characteristics of picene-(C14H29)2 thin film FETs with an SiO2 dielectric. W = 500 μm
sample | μ (cm2V−1s−1) | |Vth| (V) | ON/OFF | S (V/decade) | L (μm) |
---|---|---|---|---|---|
#1 | 3.9 | 51.0 | 2.2 × 106 | 6.6 | 300 |
#2 | 8.0 | 26.1 | 1.5 × 107 | 2.7 | 200 |
#3 | 7.8 | 37.6 | 3.4 × 106 | 3.6 | 250 |
#4 | 9.5 | 35.0 | 6.8 × 106 | 2.9 | 300 |
#5 | 7.0 | 28.3 | 4.6 × 106 | 2.8 | 350 |
#6 | 6.6 | 18.8 | 8.2 × 106 | 1.9 | 450 |
#7 | 7.0 | 21.5 | 5.1 × 106 | 2.6 | 450 |
average | 7(2) | 30(10) | 6(4) × 106 | 3(2) |