Figure 1
From: Fabrication and Electrical Properties of Stacked Graphene Monolayers
Low temperature electronic transport in a monolayer graphene grown by CVD.
(a) The longitudinal resistivity ρxx and Hall conductivity σxy as a function of back gate voltage Vg. (b) The magnetoresistance described as Rxx(B)/Rxx(0) as a function of magnetic field at Vg = 0 V, 7 V.
