Figure 4
From: Fabrication and Electrical Properties of Stacked Graphene Monolayers
Magnetotransport in two-stacked graphene monolayers.
(a) The magnetoresistance described as Rxx(B)/Rxx(0)-1 at Vg = 0 V, 20 V and 40 V at 1.9 K. (b) Hall resistance at Vg = 0 V, 20 V and 40 V at 1.9 K. (c, d) Longitudinal resistance Rxx as a function of the back-gate voltage at various magnetic fields at (c) 1.9 K and (d) 300 K.
