Figure 7
From: Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Magnetic field sensing.
(a) Room-temperature ODMR spectra of 4H-SiC obtained in magnetic fields B = 1 mT and B = 3.5 mT. (b) The VSi(V2) ODMR frequencies as a function of magnetic field for B||c. Experimental data are shown by symbols, the solid lines correspond to the calculation as explained in the text. (c) An ODMR line of VSi(V2) fitted to Eq (4). Arrows indicate the positions of the 29Si isotope peaks.
