Figure 4
From: Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
(a) Schematic of the heterojunction diode with mask openings for MoS2 and p-Si indicated for spectral response measurements. (b) Absolute spectral response (Abs. SR) vs. wavelength (lower x-axis) and energy (upper x-axis) related to the diode device with an 8.26 nm thick MoS2 film at zero bias and reverse bias (VR) of 1 and 2 V with the mask opening on MoS2. The inset indicates the illumination of the diode. (c) Calculated energy bands for bulk MoS2. (d) Variation of the direct and indirect band gaps, with respect to the equilibrium case, as a function of the interlayer distance (expressed in %) and (e) variation of the direct and indirect band gaps, with respect to the equilibrium case, as a function of the lattice spacing (expressed in %).
