Figure 1 | Scientific Reports

Figure 1

From: Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Figure 1

Schematic illustrations of GaN-based VLED with CF-based TCEs and their electrical conduction mechanism.

(a), Schematic view of GaN-based VLED with CF-based TCEs after EBD; the zoom-in figure shows that CFs can be formed within TCEs. (b,c), Current–voltage characteristic curves measured for a 20-nm-thick SiNx TCE before and after EBD. (d), Long-term stability of LRS at 1 V as a function of retention time. (e), Nitrogen concentration of SiNx films and at the interface between the SiNx TCE and n-GaN layer before and after EBD, as determined by Auger electron spectroscopy.

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