Figure 2 | Scientific Reports

Figure 2

From: Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Figure 2

Comparison of electrical characteristics of proposed CF-based TCEs on n-GaN layers before and after EBD.

(a,b), I–V characteristic curves measured for different pad spacings of insulating ITO deposited on n-GaN layers (a) before and (b) after EBD. (c,d), I–V characteristic curves measured for different pad spacings of insulating ITO deposited on n-GaN layers (c) before and (d) after EBD.

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