Figure 1
From: Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
A gate controlled graphene-MoS2 heterojunction (GMH).
(a) A schematic diagram to show the field-effect Schottky barrier transistor (FESBT) device structure of the gate controlled GMH. (b) The Raman spectrum of the GMH, confirming the formation of the heterojunction between micromechanical exfoliated graphene and MoS2. The inset shows the laser spot (Red dot) located at the GMH. (c) Optical image of the GMH after the electrode fabrication process. The electrical contacts on MoS2 and graphene were fabricated by electron beam lithography and electron beam evaporation of Cr/Au (10 nm/50 nm). (d) AFM image of the GMH. The MoS2 is ~8 nm and graphene is ~3 nm. The graphene is partly folded. The inset shows the graphene-MoS2 heterojunction with 1 μm2 area.
