Figure 2
From: Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
The experimental results of the gate controlled GMH.
(a) Current vs. bias voltage characteristic of a GMH (Vgate = 0), showing a Schottky diode characteristic with ~1.1 ideality factor. (b) The current vs. bias voltage characteristics of GMH at various Vgate. The black arrow indicates the direction of increasing Vgate. (c) The current vs. gate voltage characteristics of GMH at various Vbias. The black arrow indicates the direction of increasing Vbias. (d) The forward bias current as a function of Vgate. A unipolar control of forward current with the ratio of 105 is obtained.
