Figure 4
From: Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
The theoretical model of the gate controlled GMH.
(a) The schematic structure of the gate controlled GMH. The MoS2 is sandwiched between the graphene and the SiO2. (b) The Schottky barrier height obtained from different gate bias by solving the Poisson equation. Large (0.34 eV) Fermi level shift is obtained by −40 to 40 V gate control. (c) The simulations (Lines) and experiments (Points) of the FESBT. (d) Theoretical analysis showing that the subthreshold swing of FESBT overcomes the limitation of 60 mV/dec of conventional FET. (e) The mobility vs. the Vgate showing a maximum mobility of 58.7 cm2/V·s. The mobility is induced from the experimental results in Fig. 2c at 0.1 V bias. (f) The mobility vs. the Schottky barrier height showing that the maximum mobility is obtained at a barrier height of 0.26 eV.
