Figure 5
From: Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
The energy band diagrams for GMH and MGM.
(a) Schematic view of the energy level alignment of the FESBT with Si/SiO2/MoS2/Graphene structure. (b) Schematic band diagrams of GMH with Vgate = 0. (c) Schematic band diagram of GMH with Vgate > 0. Applying a positive voltage on the gate induces electrons in graphene, decreasing its work function and the Schottky barrier height. (d) Schematic band diagrams of GMH with Vgate < 0. Applying a negative voltage on the gate induces holes in graphene, lowering its Fermi level and increasing the Schottky barrier height. Panels (e) and (f) show the energy diagram of the MGM under different gate voltages. When a higher gate voltage is applied, it induces more charges in graphene, due to which the Fermi level rises. Thus the energy barrier between graphene and MoS2 decreases and the conductance increases. In this way, the current flow is modulated by the gate voltage.
