Figure 6
From: Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
Comparison of our FESBT with state-of-the-art graphene transistors and back-gated MoS2 transistors.
The graphene transistors have a high mobility but quite a low on/off ratio. The MoS2 transistors have a high on/off ratio but quite a low mobility. The FESBT combines the qualities of high mobility from graphene and high on-off ratio from MoS2.
