Table 2 The obtained fitting parameters: carrier location energies (σ) under different excitation conditions
From: Temperature-dependent photoluminescence in light-emitting diodes
Excitation energy | 405 nm laser | 325 nm laser | ||||
|---|---|---|---|---|---|---|
Excitation power | 2 mW | 10 mW | 60 mW | 1 mW | 5 mW | 30 mW |
σ (meV) | 24.70 | 23.58 | 18.70 | 14.82 | 17.56 | 17.21 |
