Figure 1
From: Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
Sample structure and experimental setup.
(a) The film structure of the MTJs. (b) Finite element analysis results for the vertical displacement of the sample for 12° of screw rotation, with an amplification factor of 53 to exaggerate the deformation for clarity. (c) Side view of the setup used to apply mechanical strain, consisting of clamps and a central vertical screw. (d) Strain-enhanced TMR due to clamping, where the measurements were repeated thrice without clamping and then thrice with clamping, to verify the effect.
