Figure 3
From: Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
The effects of strain on coercivity.
(a) The coercivity of the hard and soft magnetic layers of the device used in Fig. 2(d) as a function of screw rotation angle, for forward and backward sweeps of the magnetic field. (b) The VSM data for patterned devices, indicating that the thicker Co40Fe40B20 layer (the bottom ferromagnetic layer) was the hard magnetic layer.
