Figure 1 | Scientific Reports

Figure 1

From: Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Figure 1

Schematic energy band alignment for the In0.17Al0.83N/GaN interface.

The black lines represent the measured XPS binding energy for core levels and VBM from Series I samples, while the red lines show the corrected results by numerical treatments for In0.17Al0.83N. The inset illustrates the deviation of the apparent spectrum (the blue line) from the actual level (the red line labeled as corrected ) at the interface caused by the polarization-induced internal field in In0.17Al0.83N layer.

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