Table 1 Structural parameters of the samples for XPS and PL measurements
No. | Sample structure | In composition x (%) | InAlN thickness (nm) | GaN thickness (nm) | |
|---|---|---|---|---|---|
Series I | A | InxAl1-xN epilayer | 17.3 | 1 | 2000 |
B | InxAl1-xN epilayer | 17.3 | 20 | 2000 | |
C | GaN | / | / | 2000 | |
Series II | D | InxAl1-xN/GaN MQWs | 17.3 | 1.5 | 4 |
E | InxAl1-xN/GaN MQWs | 17.3 | 2.2 | 4 | |
F | InxAl1-xN/GaN MQWs | 17.3 | 3 | 4 |
