Figure 3
From: Line-patterning of polyaniline coated MWCNT on stepped substrates using DC electric field
Line patterning of MWCNT@PANI on a polyimide film.
(a) Photograph of MWCNT@PANI line pattern on the polyimide (PI) film. Gap between two copper-electrodes is 100 μm. (b) FEG-SEM image of a red rectangular region in (a). Pores on the PI film formed during etching of the PI film to enhance the copper-electrode adhesion on the film. The pore diameter is ~1 μm. (c) FEG-SEM image of a red rectangular region in (b). (d) FEG-SEM image of a red rectangular region in (c). Each MWCNT@PANI in the line pattern aligns along the direction of the applied electric field.
