Figure 3 | Scientific Reports

Figure 3

From: Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

Figure 3

Experimental evidence of the formation of an ultra-thin O-rich layer by field-induced oxygen migration (FIOM) at the AZO/NiO interface.

(a) Cross-sectional TEM images obtained for three different AZO/NiO/Pt structures: after forming with negative bias (N-Forming, left panel); after forming with positive bias (P-Forming, middle panel); before forming (pristine, right panel). (b and c) SIMS depth-profile data (b) and the expanded one (c) measured for the three different AZO/NiO/Pt structures.

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