Figure 4 | Scientific Reports

Figure 4

From: Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

Figure 4

Resistive switching characteristics of ultra-thin O-rich layers formed by FIOM in AZO/Pt and CZO/Pt structures.

(a) Schematic illustration of AZO/Pt and CZO/Pt structures with contacts for electrical measurements. (b and c) I–V curves of AZO/Pt (b) and CZO/Pt (c) structures. RS behavior (red squares) is observed after 1-step forming (black squares) only under negative applied voltage. (d) Cross-sectional TEM images of three different CZO/Pt structures: after forming with negative bias (N-forming, left panel); after positive bias (middle panel); pristine (right panel).

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