Figure 2
From: Controllable Schottky Barriers between MoS2 and Permalloy
(a) I-V curves of the tri-layer MoS2 FET device with Py directly contacting to MoS2 from T = 100 to 200 K. (b) Arrhenius plot ln(IDS/T3/2) vs 1000/T at different drain-source voltages (VDS). (c) Extraction of ΦB via the y-intercept value. Each data point here represents the slope obtained from the Arrhenius plot in (b) under a specific VDS. (d) A band diagram showing a negative Schottky barrier.
