Table 1 Summary of the Hall data taken from a batch of B-γ-CsSnI3 samples

From: Energy barrier at the N719-dye/CsSnI3 interface for photogenerated holes in dye-sensitized solar cells

Thickness (nm)

Mobility (cm2V−1s−1)

Carrier Density (1019cm−3)

Conduction Type

150

2.66 ± 0.66

4.10 ± 0.27

p

300

4.78 ± 0.59

4.17 ± 0.17

P

600

19.59 ± 4.05

3.05 ± 0.53

p

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